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등록 실리콘 기판을 이용한 다중 게이트 모스 트랜지스터 및 그 제조 방법
- 출원번호
- 12556666 (2009.09.10)
- 공개번호
- 20100019321 (2010.01.28)
- 등록번호
- 8164137 (2012.04.24)
- 출원국
- 미국
- 협약과제
- 05MB2700, IT융합기술 인프라 구축, 김종대
- 초록
- Provided are a multiple-gate MOS (metal oxide semiconductor) transistor and a method of manufacturing the same. The transistor includes a single crystalline active region having a channel region having an upper portion of a streamlined shape (∩) obtained by patterning an upper portion of a bulk silicon substrate with an embossed pattern, and having a thicker and wider area than the channel region; a nitride layer formed at both side surfaces of the single crystalline active region to expose an upper portion of the single crystalline active region at a predetermined height; and a gate electrode formed to be overlaid with the exposed upper portion of the single crystalline active region of the channel region
- KSP 제안 키워드
- MOS transistor, Metal-oxide(MOX), Nitride layer, Oxide semiconductor, Si substrate, Silicon substrate, Single-crystalline, active region, bulk silicon, gate electrode, metal oxide semiconductor