상세정보
등록 임베디드 상변화 메모리 제조 방법
- 출원번호
- 12942255 (2010.11.09)
- 공개번호
- 20110065246 (2011.03.17)
- 등록번호
- 8071396 (2011.12.06)
- 출원국
- 미국
- 협약과제
- 05MB1200, 나노급 상변화 정보저장기술 개발, 유병곤
- 초록
- An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.