상세정보
등록 불연속 금속-절연체 전이 소자의 전도층 구조
- 출원번호
- 12162964 (2007.01.31)
- 공개번호
- 20090057820 (2009.03.05)
- 등록번호
- 7989792 (2011.08.02)
- 출원국
- 미국
- 초록
- An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.
- KSP 제안 키워드
- metal layer, metal-insulator, metal-insulator transition, transition device
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 병렬 전도층 구조를 갖는 금속-절연체 전이 소자 | 대한민국 |