상세정보
등록 도넛형태의 촉매금속층을 이용한 실리콘 나노튜브 제조방법
- 출원번호
- 12304737 (2006.12.08)
- 공개번호
- 20090325365 (2009.12.31)
- 등록번호
- 7985666 (2011.07.26)
- 출원국
- 미국
- 협약과제
- 05MB4900, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발, 맹성렬
- 초록
- Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
- KSP 제안 키워드
- Catalytic metal, Metal islands, Nucleation sites, Silicon Nitride, Silicon nanodots, Silicon nanowires(SiNWs), thin film(TF)