등록
인듐 틴 옥사이드 전자빔 리지스트의 합성 및 ITO 패터닝 방법개발
- 발명자
-
김기출, 신성진, 강대준, 맹성렬
- 출원번호
-
12532149 (2008.03.19)
- 공개번호
-
20100035179 (2010.02.11)
- 등록번호
- 8101337 (2012.01.24)
- 출원국
- 미국
- 협약과제
-
06MB4700, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발,
맹성렬
- 초록
- Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.
- KSP 제안 키워드
- 2-ethoxyethanol, Electron Beam, Electron beam resist, Indium chloride, Tin Oxide, Tin chloride, indium tin oxide(ITO), patterning method, resist pattern