BROWSE
Detail
Registered Method of fabricating phase-change memory devices using solid-state reaction
- Inventors
- Lee Seung-Yun, Byoung Gon Yu, Soon-Won Jung, Park Young Sam, Yoon Sung Min
- Application No.
- 13110579 (2011.05.18)
- Publication No.
- 20110223716 (2011.09.15)
- Registration No.
- 8470719 (2013.06.25)
- Country
- UNITED STATES
- Abstract
- Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
- KSP Keywords
- High Speed, Low-Power, Non-Volatile Memory(NVM), Nonvolatile memory devices, Phase Change Material(PCM), Phase change, Power Consumption, material forming, memory device, solid state, solid-state reaction