상세정보
등록 고상 반응을 이용하는 상변화 메모리 소자 및 그 제조 방법
- 출원번호
- 13110579 (2011.05.18)
- 공개번호
- 20110223716 (2011.09.15)
- 등록번호
- 8470719 (2013.06.25)
- 출원국
- 미국
- 초록
- Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
- KSP 제안 키워드
- High Speed, Low-Power, Non-Volatile Memory(NVM), Nonvolatile memory devices, Phase Change Material(PCM), Phase change, Power Consumption, material forming, memory device, solid state, solid-state reaction