상세정보
등록 표면 에너지 제어를 이용한 유기 박막 트랜지스터 제조 방법
- 출원번호
- 12435721 (2009.05.05)
- 공개번호
- 20100029049 (2010.02.04)
- 등록번호
- 8058115 (2011.11.15)
- 출원국
- 미국
- 협약과제
- 07IB1100, OTFT 소자 신뢰성 향상 기술 개발, 도이미
- 초록
- Provided is a method of fabricating an organic thin film transistor (OTFT) using surface energy control. The method changes a polarity of a gate insulating layer to a polarity of a semiconductor channel layer to be formed on the gate insulating layer by controlling surface energy of the gate insulating layer, thereby promoting growth of the semiconductor channel layer on the gate insulating layer. According to the method, the interface characteristics between the gate insulating layer and the semiconductor channel layer are improved, and thus it is possible to implement an OTFT that can minimize leakage current and has high field effect mobility and low turn-on voltage.
- KSP 제안 키워드
- Channel layer, Energy control, Interface characteristics, Leakage current, Organic thin film, Organic thin-film transistors, Thin-Film Transistor(TFT), Turn-on, Turn-on voltage, field effect, field-effect mobility, high field, high field-effect mobility, insulating layer, low turn-on voltage, surface energy, thin film(TF)