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구분 출원국
출원년도 ~ 키워드


등록 상변화 메모리 소자 및 그 제조 방법

상변화 메모리 소자 및 그 제조 방법
이미지 확대
윤성민, 유병곤, 이승윤, 박영삼, 이남열, 최규정
12240013 (2008.09.29)
20090184307 (2009.07.23)
7977674 (2011.07.12)
A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12fxf0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
KSP 제안 키워드
Amorphous state, Crystalline state, High Temperature, Increasing temperature, Long Time, Metastable phase, Operation stability, Phase Change Material(PCM), Phase change, Phase transition, Reset operation, Single phase, crystallization temperature, distribution characteristics, memory device, mixed phase, set operation
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구분 특허 출원국 KIPRIS
등록 상변화 메모리 소자 및 그 제조 방법 일본