상세정보
등록 산화물 반도체 박막용 조성물, 이를 채용한 전계 효과 트랜지스터 및 이의 제조 방법
- 출원번호
- 12331688 (2008.12.10)
- 공개번호
- 20090261389 (2009.10.22)
- 등록번호
- 8017045 (2011.09.13)
- 출원국
- 미국
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx). The thin film formed of the composition remains in amorphous phase at a temperature of 400� C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga
- KSP 제안 키워드
- Active Layer, Amorphous Phase, Field-effect transistors(FETs), Low temperature(LT), Low-temperature process, Molar percentage, Oxide semiconductor, Raw materials, Semiconductor thin film, Temperature process, Tin Oxide, Zinc oxide(ZnO), aluminum oxide, electrical characteristics, field effect, thin film(TF)