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Registered NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Inventors
- Yoon Sung Min, Byoung Gon Yu, Park Young Sam, Soon-Won Jung, Lee Joonsuk, Lee Seung-Yun
- Application No.
- 12428628 (2009.04.23)
- Publication No.
- 20100108977 (2010.05.06)
- Registration No.
- 8445887 (2013.05.21)
- Country
- UNITED STATES
- Abstract
- A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
- KSP Keywords
- Channel structure, Electrode layer, Phase Change Material(PCM), Phase change, Power Consumption, Second metal, Self-heating, Thermal loss, Via-hole, insulating layer, memory device, metal electrode, resistive heating, thermal conductivity