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Detail
Registered THE SENSING DEVICE
- Inventors
- Chang-Geun Ahn, Gun Yong Sung, Park Chan Woo, Chil Seong Ah, Kim Ansoon, Baek In Bok, Tae-Youb Kim, Yang Jong-Heon
- Application No.
- 13122273 (2009.05.27)
- Publication No.
- 20110180856 (2011.07.28)
- Registration No.
- 8426900 (2013.04.23)
- Country
- UNITED STATES
- Project Code
- 08MC4400, Home Care Sensor Module for Highly Sensitive Urinalysis, Gun Yong Sung
- Abstract
- Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.
- KSP Keywords
- Field-effect transistors(FETs), Fluid flow, Functional group, High Sensitivity, Reactive material, Sensing device, Surface Area, Three dimensional(3D), Three-dimensional structure, capacitor sharing, dimensional structure, field effect, gate electrode, insulating layer