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등록 넓은 linear-in-dB 가변 이득 범위를 갖는 CMOS 가변 이득 증폭기

넓은 linear-in-dB 가변 이득 범위를 갖는 CMOS 가변 이득 증폭기
이미지 확대
발명자
장승현, 이광천
출원번호
12878307 (2010.09.09)
공개번호
20110063030 (2011.03.17)
등록번호
8102209 (2012.01.24)
출원국
미국
협약과제
09ZR1600, 유비쿼터스 인프라 연구, 김대식
초록
A complementary metal-oxide semiconductor (CMOS) variable gain amplifier includes: a cascode amplifier including a common source field effect transistor and a common gate field effect transistor in a cascode structure; a first current generation unit connected in parallel to a drain of the common gate field effect transistor and configured to vary transconductance of the cascode amplifier; a second current generation unit connected to a common source of the cascode amplifier and configured to control a bias current of the cascode amplifier; a current control unit configured to generate a current control signal for the first and second current generation units; and a load stage connected in series to a drain of the cascode amplifier and configured to output an output current, which is varied by the overall transconductance of the cascode amplifier, as a differential output voltage.
KSP 제안 키워드
Cascode amplifier, Complementary metal-oxide-semiconductor(CMOS), Control Signal, Control Unit, Current Control, Current generation, Field-effect transistors(FETs), Generation unit, Linear-in-dB, Metal-oxide(MOX), Output Voltage, Oxide semiconductor, Source field, Variable Gain, Variable Gain Amplifier(VGA), bias current, cascode structure, common gate, common-source, connected in series, differential output, field effect, gain range, gate field, metal oxide semiconductor, output current