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등록 저전압.고안정성 EEPROM 소자

저전압.고안정성 EEPROM 소자
이미지 확대
발명자
강진영, 도이미, 백규하
출원번호
12796840 (2010.06.09)
공개번호
20110140189 (2011.06.16)
등록번호
8421144 (2013.04.16)
출원국
미국
초록
An electrically erasable programmable read-only memory includes a first polysilicon layer, a second polysilicon layer and a third polysilicon layer, the first polysilicon layer and the third polysilicon layer forming a control gate and the second polysilicon layer forming a floating gate. The first polysilicon layer is horizontally disposed in series with the second polysilicon layer and is connected to the third polysilicon layer, so that the control gate encloses all of the floating gate except for a tunnel surface of the floating gate.
KSP 제안 키워드
Control gate, Floating gate, Manufacturing method, Read-only