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Detail
Registered MEMORY CELL AND MEMORY DEVICE USING THE SAME
- Inventors
- Kim Byeonghoon, Chunwon Byun, Yoon Sung Min, Park Sang-Hee, Ryu Min Ki, Yang Shinhyuk, Cho Kyoung Ik, Hwang Chi-Sun
- Application No.
- 13300688 (2011.11.21)
- Publication No.
- 20120134197 (2012.05.31)
- Registration No.
- 8493768 (2013.07.23)
- Country
- UNITED STATES
- Project Code
- 10MB3200, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.
- KSP Keywords
- Control Signal, Individual control, Switching element, control lines, memory cell, memory device
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | MEMORY CELL AND MEMORY DEVICE USING THE SAME | KOREA | KIPRIS |