상세정보
등록 질화물 반도체 소자
- 출원번호
- 14311675 (2014.06.23)
- 공개번호
- 20150187886 (2015.07.02)
- 등록번호
- 9136347 (2015.09.15)
- 출원국
- 미국
- 협약과제
- 13VB1700, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- Provided is a nitride semiconductor device including: a substrate having through via holes; first and second nitride semiconductor layers sequentially stacked on the substrate; drain electrodes and source electrodes provided on the second nitride semiconductor layer; and an insulating pattern provided on the second nitride semiconductor layer, the insulating pattern having upper via holes provided on the drain electrodes, wherein the through via holes are extended into the first and second nitride semiconductor layers and expose a bottom of each of the source electrodes.
- KSP 제안 키워드
- Via-hole, nitride semiconductor, semiconductor device, semiconductor layers, through via