상세정보
등록 질화물 반도체 소자의 제조 방법
- 출원번호
- 14310784 (2014.06.20)
- 공개번호
- 20150187599 (2015.07.02)
- 등록번호
- 9159583 (2015.10.13)
- 출원국
- 미국
- 협약과제
- 13VB1700, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.
- KSP 제안 키워드
- metal layer, nitride semiconductor, semiconductor device, semiconductor layers