상세정보
등록 반도체 소자 및 그 제조방법
- 출원번호
- 14324724 (2014.07.07)
- 공개번호
- 20150194363 (2015.07.09)
- 등록번호
- 9337121 (2016.05.10)
- 출원국
- 미국
- 협약과제
- 13VB1700, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
- KSP 제안 키워드
- Heat sink, Micro Heat Sink, Micro-channels, Outlet channel, active region, semiconductor device