상세정보
등록 질화물계 수직형 트랜지스터 구조 및 제조방법
- 출원번호
- 16137235 (2018.09.20)
- 공개번호
- 20190103483 (2019.04.04)
- 등록번호
- 10608102 (2020.03.31)
- 출원국
- 미국
- 협약과제
- 17HB2400, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
- 초록
- Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.
- KSP 제안 키워드
- Bottom surface, Drain electrode, Insulation layer, gate electrode, semiconductor device, through-hole
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 반도체 소자 및 그의 제조 방법 | 대한민국 | KIPRIS |