상세정보
등록 나노 시트 결함의 선택적 부동화 방법
- 출원번호
- 16175284 (2018.10.30)
- 공개번호
- 20190131201 (2019.05.02)
- 등록번호
- 10580714 (2020.03.03)
- 출원국
- 미국
- 협약과제
- 17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
- 초록
- Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.
- KSP 제안 키워드
- Conductive film, Defect passivation, PH of the solution, Passivation region, Transition metal, electronic devices, metal chalcogenide, transition metal chalcogenide
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 나노 플레이크 결함 부동화 방법 및 이를 이용해 제조된 전자 소자 | 대한민국 | KIPRIS |