ETRI-Knowledge Sharing Plaform

Phase Change Material(PCM) Memory Applications Applied Physics Top Electrode Nonvolatile Memory Devices Thin-Film Transistor(TFT) Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Highly Efficient Next-Generation Flexible Oleds Reset Current High Temperature Low-Cost Surface Roughness Pulse Width Oled Lighting Temperature Coefficient Of Resistance(TCR) Stress Reduction Light Extraction Efficiency Ferroelectric Capacitor Wrinkle Structure Heating Layers Phase Transition P(Vdf-Trfe) Copolymer Sige Film Gate Insulator Bottom Electrode Programming Current Dry Etching Switching Speed 1/F Noise Field Effect Transistors(Substrate temperature) Ordered Mesoporous Silica Film Copolymer Films Electrical Characterization 5 Nm Etching Process Memory Window Switching Characteristics Alloy Films High-Density Process Parameters Surface Tension(ST) Phase-Change Random Access Memory(PRAM) Chalcogenide Films Silica Precursor Infrared Focal Plane Array(IRRPA) Energy Dispersive X-Ray Spectroscopy(EDX) X-Ray Diffraction Brij-76 Silicon-Germanium(SiGe) Control Device Gas Mixture Image Blurring Color Stability Device Structure Memory Array Ir Absorption Gas Flow Rate Simulation Results Thermal Isolation Tin Hard Mask Silicon Film Screen Printing Si Substrate Integrated Substrate Luminous Current Efficiency Ferroelectric Polarization Compressive Stress Barrier Layers Blue Oleds Gas Mixing Oxide Tfts Lower Power Fabrication Method U-Shaped Transmission Electron Microscopy (Tem) Silicon Wafer Inverted Organic Light-Emitting Diodes Device Characteristics Time-Dependent Light Sources Multi-Layered Graphene Temperature Rise Spectral Stability Ge Sb Te 2 2 5 Apparent Rate Constant Current Reduction Optical Simulation Cmos-Compatible Bonding Technology Dry Process Calcination Temperature Top Layer Extraction Structure Superior Mechanical Properties Patterning Process Active Devices Cell Resistance Sputtering Power Ferroelectric Gate Chemical Structure Device Reliability Graphene Electrode Active Pore Size Stoney Equation Organic Molecules Low Dielectric Constant Antimony Selenide Set Operation Vacuum Deposition Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Highly Reliable Formation Mechanism Electrical Properties(I-V curve) Active Channel Ferroelectric Memory Photo-Crosslinking Reaction Intermetal Dielectric(IMD) Photopolymerization Kinetics High-Tech Grazing-Incidence Small-Angle X-Ray Scattering Polarization Reversal Operating Region Organic Ferroelectric Chalcogenide Material Annealing Temperature Double Layered High Performance Annealed Films Signal Delay Ferroelectric Materials Gate Leakage Current Failure Mode Helicon Plasma First-Order Sio 2 Cost-Effective Amorphous Phase On/Off Ratio Room-Temperature Silver Paste Oled Devices Etching Technique Surface-Modified Gate Dielectric Electroless Copper Plating High-Resolution Ferroelectric Polymer Semiconducting Channel Smart Lighting Copolymer Thin Films Fabrication Process Low Voltage Operation Plasma Etching Low Power Consumption Drying Condition Growth Orientation Transparent Organic Light-Emitting Diodes Uv Curing Sige Alloy Single-Layer Research And Development Layer Shrinkage White Device Wrinkle Variations Noise Characteristics Peak Point Program Disturbance Quantum Dot(QD) Critical Damage Device Failure Nano-Sized Organic Layers Insulation Properties Switch Circuit Afm Studies Process Temperature Ti-Si-N And Physical Properties Measurement Results Polyethylene Naphthalate Organic And Inorganic Compounds Zno Layer Graphene Anode Annealing Effects Resonant Coupling Semiconductor Technology Hole And Electron Transport Digital-To-Analog(DAC) C-V Characteristics N-Type Design And Fabrication O 3 Complete Crystallization Oxygen Gas Ratio Of Current Diameter Controllable Semiconductor Diodes Large Size Deposition Technique Sb-Se Channel Structure Actuation Voltage Organic-Inorganic Hybrid Films Mixed-Mode Bending Curvature Radius Low Leakage Current Production Process Isolation Layer High-Purity Phase Separation Petri Net(PN) Pass Transistor Measurement System Phosphorus Diffusion Growth Time Bottom Layer Luminous Efficacy Top-Gate Split-Gate Degradation Phenomena Thin Film Stress Flat Plate Ge-Sb-Te Alloy Curing Conditions Root Mean Square(RMS) Out-Coupling Efficiency Functional Applications Image Quality Degradation Reliability Problems High Detectivity Mesoporous Silica Layer Injection Layers Wavelength Region Uv-Cured Films Finite Element Method(FEM) Current-Voltage On-Resistance Semi-Transparent Sense Amplifier(SA) Blue Devices Bulk-Micromachined Ag Diffusion Controlling Process Barrier Metal Relative Thickness Interfacial Properties Large Deformation Two-Step Film Stress Measurement Charge Balance High Sensitivity Optical Transparency Mid-Ir Single Cell Simulation And Measurement New Type Mean Stress Multilayer Structure Capacitor Size Plasma-Enhanced Chemical Vapor Deposition(PECVD) Resistance Reduction Infrared Imaging Writing Current Aluminum Metal Rectangular-Shaped Terminal Structure High-Quality Transfer Method Dry Transfer Suspended Membrane Current Pulse High Index Capping Layer Initialization Vector(IV) Microlens Array 72.15.-V Low-K Dielectrics Crystallization Process Deposition Process Device Design Methyl Ligand A-Si:H Etching Selectivity Frame Rate Chemical Treatment Incident Angle Channel Thickness Programmable Metallization Cell Emission Characteristics Switching Time Titanium(Iv) Butoxide Large-Area Electronics Nanometer Size Gas Barrier Bending Characteristics Remnant Polarization Higher Frequency External Surface Ferroelectric Nature Silicon Dioxide Substrate Grain Size Memory Characteristics Tin Film Failure Behavior Voltage Coupling Oled Pixels Soft Foundation Oled Display Coupling Ratio(CR) Oh Groups Lamination Process Optical Haze P-Si Power Distribution Optimum Condition Noise Equivalent Temperature Difference Post-Annealing Treatment Reset And Set Li-Doped Fatigue Degradation Situ Doping Threshold Switching Sensing Electrodes Scattering Experiments Mixing Ratio Memory Behavior Green Phosphorescence Multi-State Infrared (Ir) Sensor After Treatment Memory Switching Passivation Layer Top Emission Solid Electrolyte Array Technology Time-Domain Simulations Electrode Contact Crystalline Phase Threshold Voltage(Vth) Absorption Rate Adhesion Layer Sn-Doped Etching Rate Conjugated Polymer(PFO-co-MEH-PPV) Surface Morphology Inverse Mode Out-Of-Plane Deformation Film Drying Floating Gate Amplifier Design Heat Treatment Optical Analysis Glass Plate Layered Phase Quantitative Analysis And Gate CHF 3 Endurance Property Switching Element Rf Power Loading Effect High Aspect Ratio Low Resistivity Electron Transport Layer Mems Sensor Switching Properties Thermal Time Constant(TTC) Electron Transport Materials Resistance Change Radio Frequency Magnetron Sputtering N-Hexane Multilayered Structure Flexible And Transparent Geometrical Effect Atomic Ratio Dielectric Properties Finite Difference Time Domain(FDTD) Sensor Applications Icp Etching Organic Vapor Phase Deposition Nonvolatile Logic Sputtering Method Thermal Insulation Full Color Operational Performance Triethylene Glycol Glass Substrate Inverted Top-Emitting Organic Light-Emitting Diodes(ITEOLEDs) Crystalline State Buffer Layer LOW POWER AND HIGH SPEED Dc Bias Thin Channel Low Power Applications Dot Pattern Silicon-Based Thin Films Amorphous Silicon Structural Approach Titanium Oxide Infrared Detection Sampling Time(Ts) Maskless Deposition Fatigue Behaviors High Efficiency Resistance Memory Organic Materials Mems Actuators Gate Voltage Etch Rates Volume Ratio Deposition Method High Electrical Conductivity Initial Value Output Characteristics Key Factor Oxygen Flow Rate Hole Injection Layer(HIL) Wireless Power Transmission(WPT) Voltage Sweep Device Applications Physical Separation Color-Selective Bulk Micromachining Resistive Switch Ag-Doped Retention Properties High Resistivity Air Interface Fully Depleted(FD) Plasma-Enhanced Atomic Layer Deposition Physical Dimension 1-Methoxy-2-Propanol Thermal Cycle Ultraviolet Photoelectron Spectroscopy Process Optimization Foundation Layers Surface Modification Thermal Barrier Self-Heating Plastic Substrate Laser Ablation Complementary Metal-Oxide-Semiconductor(CMOS) Oxygen Diffusion Lanthanide Strontium Mangatate Different Materials Micro Accelerometer 20 Nm Al O 2 3 Thermal Resistance Device Performance Substrate Heating Energy-Efficient White Organic Light-Emitting Diodes Hybrid Solutions Block Copolymer Non-Volatility Semiconducting Polymer Chalcogenide Thin Film Overall Resistance Smooth Surface Size Controllability Rf Magnetron Sputtering Technique Optical Band Gap Emission Properties Organic Photovoltaics(OPVs) Wet Process Residual Stress Gst Thin Films Middle Layer Spin-Coating Method Tetraethylene Glycol Si Film Alloy Layer Lattice Distortion Ferroelectric Switching Electronic Switching Doped Silicon Light-Emitting Electrochemical Cells(LECs) Micromachined Accelerometer Hybrid Type Led Lamp Mems Accelerometers High Surface Area Geometrical Optimization Spin-Coated Breakdown Strength High External Quantum Efficiency Device Integration P-N Heterojunction Light Exposure Active Phase Highly Doped Flat Membrane Thermal Release First Stokes(S1) High Breakdown Single-Crystalline La-Substituted Structure Design Tin Layer Diffusion Process High Mobility Polymer Memory Sheet Resistance Formation Temperature Glass Surface Chalcogenide Alloys Ball Lens Cl 2 Dc Current Potential Applications Atomic Force Microscope(AFM) Electrical Threshold Isolation Effect Display Applications Amorphous Films Silica Surface Switching Pulse Moderate Temperature Flexible Memory Ultra-Large-Scale Integrated Circuits Low Thermal Conductivity Sige Hbt Memory Effect Luminance Distribution Structure Effect Ferroelectric Properties Low Electrical Resistivity Indium Tin Oxide(ITO) Sb Addition High Light Novel Process Infrared Sensor Method If High Reliability Pore Structure One-Step High Refractive Index Electro-Optical Ultraviolet Light(UV) Unique Solution Capped Structure Pc-Based Time Transient Charge Injection Lighting Source Mems Structure Crystallization Speed Optical Characteristics Capacitance-Voltage Measurements Memory Cell Metal-Ferroelectric-Insulator-Semiconductor Guided Mode Low Temperature Deposition Transparent Memristor Hysteresis Curves Computer Vision(CV) Large Field Based Approach Crystallographic Orientation As-Deposited Noise Factor Experimental Study Optoelectronic Devices Low Melting Temperature Electron Injection Layer Trans-Scale Insulating Layer Inter-Diffusion P-Type Harsh Conditions Wide Viewing Angle Applied Electric Field Metal Electrode Transparent Electronics Surface Micromachining Post-Annealed 1 H Switching Device Tungsten Electrode Preferred Orientation Xrd Spectrum Blue Organic Light Emitting Diodes Hysteretic Behavior Low Deposition Temperature Operational Stability Low Stress Angular Spectrum Switching Regime Bias Voltage Abnormal Segregation Transient Temperature Low-Resistance State Ferroelectric Characteristics Solution-Processed Pore Ordering Solid-State Alloying Low Driving Voltage Electromagnetic Waves(EM) Cmos Process Phase Content Material Composition Ferroelectric Behavior Low Substrate Temperature Low Noise Radiation Hardness Current Condition Joule Heating CF 4 Vapor-Liquid-Solid Set Speed Etching Characteristics Temperature Variations Bilayer Structure Memory Element Colorless Polyimide Ferroelectric Fatigue Color Coordinates Window Width Phosphorus Implantation Gate Driver Crystallization Rate Memory States Stainless Steel(SUS316) New Device Capacitive-Type Sol-Gel Process Crystallization Behavior Sigma-Delta Basic Structure Small-Sized Scanning Electron Microscope N-Dimethyl Acetamide Scattering Layer Diffusion Barrier(DB) Hysteresis Behavior Coercive Field Semiconducting Layer Cycling Endurance Surface Treatments Transparent Film Spectral Distortion Transparent Conducting Electrode(TCE) Hexane Solution Imaging Detector