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논문 검색결과
구분 연도 논문 피인용 원문
학술지
2007 Characteristics of N-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric   박병철   Journal of the Korean Physical Society, v.50 no.3, pp.893-896
학술지
2007 Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling   전명심   Journal of Vacuum Science and Technology B, v.25 no.1, pp.82-85 5 원문
학술지
2007 Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO2 Film   최철종   Japanese Journal of Applied Physics, v.46 no.1, pp.125-127 7 원문
학술대회
2006 Fabrications of Nano - Gap Arrays using Doubly Clamped Free - Standing Si Nanowire   유한영   MRS Meeting 2006 (Fall), pp.1-1
학술대회
2006 Selective Biofunctionalization of Silicon Nanowires on SiO2 Surfaces   김안순   MRS Meeting 2006 (Fall), pp.1-1
학술대회
2006 Formation of Ni-Disilicide Nanowire Using Ni Implantation Coupled with Laser Annealing   최철종   International Microscopy Congress, pp.1-1
학술대회
2006 Schottky Transistor as the Emerging Novel Device for Future Nanoelectronics   장문규   International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1
학술대회
2006 Characteristics of N-Type SB-MOSFETs using Metal-Gate & High-K   박병철   International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1
학술지
2006 N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS   장문규   IEEE Transactions on Electron Devices, v.53 no.8, pp.1821-1825 28 원문
학술지
2006 Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film   최철종   Electrochemical and Solid-State Letters, v.9 no.7, pp.G228-G230 1 원문
학술대회
2006 New Analysis on the Interface Trap States at Schottky Contact   전명심   International Conference on the Physics of Semiconductors (ICPS) 2006, pp.1-2
학술대회
2006 10-nm-Gate-Length n-type Schottky barrier MOSFETs with High Current Drivability   장문규   Silicon Nanoelectronics Workshop (SNW) 2006, pp.1-2
학술대회
2006 Fabrication of Dummy Structure using Inorganic Resist for Dual Gate-Controlled Single-Electron Transistor   백인복   International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN) 2006, pp.1-2
학술대회
2006 Schottky Barrier MOSFETs for Nano-Regime Applications   장문규   MRS Meeting 2006 (Spring), pp.1-18
학술지
2006 Formation of a Self-Aligned Hard Mask using Hydrogen Silsesquioxane   임기주   Applied Physics Letters, v.88 no.15, pp.1-3 3 원문
학술지
2006 Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications   장문규   Jounal of Semiconductor Technology and Science, v.6 no.1, pp.10-15
학술지
2006 Quantum Simulation of Resonant Tunneling in Nanoscale Tunnel Transistors   신민철   Journal of Applied Physics, v.99 no.6, pp.1-3 4 원문
학술지
2006 Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors   장문규   Japanese Journal of Applied Physics, v.45 no.2A, pp.730-732 32 원문
학술지
2005 30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance   안창근   IEEE Electron Device Letters, v.26 no.7, pp.486-488 16 원문
학술대회
2005 Scalability of Schottky Barrier MOSFETs for Nano-Regime Applications   장문규   Silicon Nanoelectronics Workshop (SNW) 2005, pp.1-3
학술대회
2005 EBL Patterning of Sub-10 nm Line Using HSQ with Plasma Etching Process and Fabricating of Triple-Gate MOS Transistors with 6 nm Gate Length   백인복   Silicon Nanoelectronics Workshop (SNW) 2005, pp.16-17
학술지
2005 SOI single-electron transistor with low RC delay for logic cells and SET/FET hybrid ICs   박규설   IEEE Transactions on Nanotechnology, v.4 no.2, pp.242-248 41 원문
학술지
2005 Anomalous Transmission Phase of a Kondo-Correlated Quantum Dot   강기천   Physical Review B : Condensed Matter and Materials Physics, v.71 no.4, pp.1-5 6 원문
학술대회
2004 Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance   안창근   International SOI Conference 2004, pp.207-208 원문
학술지
2004 Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique   조원주   IEEE Electron Device Letters, v.25 no.6, pp.366-368 35 원문
학술지
2003 Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications   장문규   IEEE Transactions on Nanotechnology, v.2 no.4, pp.205-209 15 원문
학술대회
2003 Si 기판에서의 광소자 응용을 위한 Ge 박막의 Transfer 기술 개발   안창근   대한전자공학회 종합 학술 대회 (하계) 2003, pp.743-746
학술대회
2003 Elevated Polysilicon source/drain 구조와 고유전율 절연막을 적용한 초미세 SOI MOSFET 의 제작 및 특성 연구   임기주   대한전자공학회 종합 학술 대회 (하계) 2003, pp.715-718
학술대회
2003 완전 결핍 SOI MOSFET의 계면 트랩 밀도에 대한 급속 열처리 효과   오지훈   대한전자공학회 종합 학술 대회 (하계) 2003, pp.711-714
학술대회
2003 Erbium 실리사이드를 이용하여 제작한 n-형 쇼트키 장벽 관통 트랜지스터의 특성   장문규   대한전자공학회 종합 학술 대회 (하계) 2003, pp.779-782
학술대회
2003 Silicon Thin-body를 이용한 100㎚ 이하 SOI-NMOSFET에서의 제작   양종헌   대한전자공학회 종합 학술 대회 (하계) 2003, pp.707-710