ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Characterization of ZnO-SnO2 Nanocomposite Thin Films Deposited by Pulsed Laser Ablation and their Field Effect Electronic Properties
Cited 19 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
저자
이수재, 황치선, 피재은, 유민기, 오힘찬, 조성행, 양종헌, 박상희, 추혜용
발행일
201405
출처
Materials Letters, v.122, pp.94-97
ISSN
0167-577X
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.matlet.2014.01.134
협약과제
13VB1900, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
초록
ZnO-SnO2 nanocomposite thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO2 oxides target, and their field effect electronic transport properties investigated as a function of annealing temperature. The films have a nanocomposite structure consisting of ZnO and SnO2 nanoparticles. The amorphous ZnO-SnO2 nanocomposite thin films, as oxide semiconductors, exhibited excellent electronic transport properties with saturation mobility of around 16.9 cm2/V s, turn-on voltage of ~-1 V, subthreshold swing of 0.22 V/decade, and high drain current on-to-off ratio of over 1010, enough to operate for next-generation microelectronic devices. These results are presumed due to the unique electronic structure of amorphous nanocomposite coupled with two heavy-metal Zn and Sn cations having spherically symmetric s-orbitals. © 2014 Elsevier B.V.
키워드
Field effect transistors, Nanocomposite, Oxide semiconductor, SnO 2, ZnO
KSP 제안 키워드
Amorphous ZnO, Annealing temperature, Coupled with, Drain current, Electronic properties, Electronic structures, Electronic transport properties, Field effect transistors(Substrate temperature), Heavy metals, I-V characteristic(Transport property), Microelectronic devices