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학술지 Effects of Nb2O5 and SiO2 Buffer Layers on the Suppression of Potassium Out-Diffusion into Indium Tin Oxide Electrode Formed on Chemically Strengthened Glass
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저자
홍찬화, 신재헌, 박래만, 김경현, 김보슬, 곽준섭, 주병권, 정우석
발행일
201409
출처
Japanese Journal of Applied Physics, v.53 no.8S3, pp.1-4
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.7567/JJAP.53.08NG01
협약과제
14PB1400, 윈도우 일체형 30인치급 터치센서 개발, 정우석
초록
We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved. © 2014 The Japan Society of Applied Physics.
KSP 제안 키워드
Applied physics, Buffer layer, Chemically strengthened glass, ITO thin film, Indium tin oxide electrodes, Ionized physical vapor deposition(IPVD), Optical transmittance, Room-temperature, electrical properties(I-V curve), indium tin oxide(ITO), out-diffusion