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학술지 Bandwidth Enhancement Technique for CMOS RGC Transimpedance Amplifier
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저자
김영호, 정의석, 이상수
발행일
201406
출처
Electronics Letters, v.50 no.12, pp.882-884
ISSN
0013-5194
출판사
IET
DOI
https://dx.doi.org/10.1049/el.2014.0612
협약과제
13PI1600, (통합)차세대 응용플랫폼을 위한 Port agnostic 요소 기술 및 보급형 대용량 NG-PON2 핵심기술 개발, 이상수
초록
A technique that can increase the bandwidth of a regulated cascode (RGC) transimpedance amplifier (TIA) is presented. The proposed new RGC input topology with a positive amplifier and an inductor enables the control of the input impedance of the circuit and isolates the large input parasitic capacitance. Using this mode the dominant pole of the input node is shifted up to a high frequency, and then the bandwidth of the CMOS RGC TIA is improved. To verify the feasibility of the proposed technique, the CMOS RGC TIA is implemented using a 1P6M 0.18 μm RF CMOS technology. The 3 dB bandwidth of 4.98 GHz is measured in the presence of a 0.5 pF photodiode capacitance with a 1.8 V supply voltage. The measured result shows that the bandwidth of the TIA can increase by about 2 GHz larger than that with the conventional RGC configuration. © The Institution of Engineering and Technology 2014.
KSP 제안 키워드
3-dB bandwidth, CMOS Technology, Dominant pole, High Frequency(HF), Input Impedance, Parasitic Capacitance, RF CMOS, Regulated cascode, Supply voltage, Transimpedance Amplifier(TIA), bandwidth enhancement