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학술지 Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side
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저자
원종일, 구진근, 이태복, 오형석, 이진호
발행일
201308
출처
ETRI Journal, v.35 no.4, pp.603-609
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.13.1912.0030
협약과제
12ZH1100, 산업계 기술지원사업, 김영선
초록
In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT. © 2013 ETRI.
키워드
FWD, IGBT, Reverse conduction, RIE, Zener diode
KSP 제안 키워드
Gate oxide, Insulated gate bipolar transistor, MEMS Technology, Operation performance, RC-IGBT, Reactive ion etching(RIE), Reverse conduction, Reverse-Conducting IGBT, Zener diode, freewheeling diode, gate electrode