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학술지 Low-Temperature-Grown InGaAs Terahertz Photomixer Embedded in InP Thermal Spreading Layer Regrown by Metalorganic Chemical Vapor Deposition
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저자
문기원, 박동우, 이일민, 김남제, 고현성, 한상필, 이동훈, 박정우, 노삼규, 박경현
발행일
201312
출처
Optics Letters, v.38 no.24, pp.5466-5469
ISSN
0146-9592
출판사
Optical Society of America(OSA)
DOI
https://dx.doi.org/10.1364/OL.38.005466
협약과제
12SF1400, 포토닉스 집적회로 기반 테라헤르츠 무선 인터커넥션 기술 개발, 박경현
초록
A novel buried photomixer for integrated photonic terahertz devices is proposed. The active region of the mesastructure InGaAs photomixer is buried in an InP layer grown by metalorganic chemical vapor deposition (MOCVD) to improve heat dissipation, which is an important problem for terahertz photomixers. The proposed photomixer shows good thermal properties compared to a conventional planar-type photomixer. The MOCVD regrowth process indicates the possibility for THz photomixers to be integrated monolithically with conventional photonic devices. © 2013 Optical Society of America.
KSP 제안 키워드
Heat Dissipation, Low temperature(LT), Metalorganic chemical vapor deposition, Planar-type, Terahertz devices, Thermal spreading, active region, conventional planar, photonic devices, thermal properties