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학술지 Negative-Differential-Resistance-Switching Si-Transistor Operated by Power Pulse and Identity of Zener Breakdown
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저자
김현탁
발행일
201310
출처
Applied Physics Letters, v.103 no.17, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.4826223
협약과제
13ZE1100, ETRI 창의연구실 사업, 손승원
초록
The identity of Zener breakdown is interpreted as metal-insulator transition (MIT). For a negative-differential-resistance (NDR) Si-transistor as a sort of MIT transistor, a structure of "reverse-pn-junction (insulator role for tunneling) and MIT" is proposed. Its characteristics are investigated through the reverse active mode of a donor-acceptor-donor bipolar transistor, similar to the NDR-transistor structure. As evidence of the MIT at outlet layer, the Ohmic behavior in I-V measurements and the NDR in a 100 KHz power pulse are observed. It switches a much higher current than a bipolar transistor when the MIT occurs and can be used as a power device. © 2013 AIP Publishing LLC.
KSP 제안 키워드
Active mode, Bipolar transistors, Donor-acceptor-donor, I-V measurement, Initialization Vector(IV), Negative differential resistance(NDR), Ohmic behavior, P-N junction, Power device, metal-insulator transition, transistor structure