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학술지 Phase Transition of Hydrogenated SiGe Thin Films in Plasma-Enhanced Chemical Vapor Deposition
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저자
윤선진, 김준관, 이성현, 이유정, 임정욱
발행일
201311
출처
Thin Solid Films, v.546, pp.362-366
ISSN
0040-6090
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2013.04.071
협약과제
12MB4900, 유연성 철강소재기판상에서 효율13%를 갖는 Si/SiGe 탠덤 박막태양전지개발, 윤선진
초록
The phase transition of hydrogenated SiGe (SiGe:H) films in plasma enhanced chemical vapor deposition was investigated by varying Ge content and hydrogen dilution ratio, R; the phase transition was then compared with that of hydrogenated Si (Si:H). The incorporation probability of Ge in SiGe:H films was strongly affected by R and continuously increased when R ranged from 7.5 to 80. The incorporation of Ge might interfere with the formation of crystalline seeds in the film due to the increase of disorder. However, once the crystalline seeds are formed in the SiGe:H films, the crystalline volume fraction increased with R more rapidly than that did for Si:H films. © 2013 Elsevier B.V.
키워드
Amorphous, Hydrogen dilution, Microcrystalline, PECVD, Phase transition, Si, SiGe
KSP 제안 키워드
Crystalline volume fraction, Ge content, Hydrogen dilution ratio, Phase transition, Plasma-enhanced chemical vapor deposition(PECVD), Si:H films, thin film(TF)