ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Double-Layered Passivation Film Structure of Al2O3/SiNx for High Mobility Oxide Thin Film Transistors
Cited 27 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
저자
박상희, 유민기, 오힘찬, 황치선, 전재홍, 윤성민
발행일
201303
출처
Journal of Vacuum Science and Technology B, v.31 no.2, pp.1-6
ISSN
1071-1023
출판사
American Vacuum Society (AVS)
DOI
https://dx.doi.org/10.1116/1.4789423
협약과제
12MB2300, 고품위 plastic AMOLED 원천 기술 개발, 유병곤
초록
The optimization of the passivation process for oxide thin film transistors with high carrier mobility was investigated. Hydrogen incorporation into oxide channels during the deposition of SiNx could degrade device stability and uniformity, especially for high-mobility devices. A novel double-layered passivation film structure composed of Al2O3/SiN x was proposed, in which thin and dense Al2O3 film prepared by atomic layer deposition was introduced underneath the SiN x layer. In-Ga-Zn-O TFT passivated with the proposed double-layered films showed no significant negative shift in turn-on voltage, even after passivation. The field-effect mobility and subthreshold swing were typically measured as 27.7 cm2 V-1 s-1 and 0.11 V/dec, respectively. Hydrogen doping was effectively protected by the introduction of Al2O3 as thin as 15 nm. © 2013 American Vacuum Society.
KSP 제안 키워드
5 nm, As 2, Atomic Layer Deposition, Device stability, Double layered, Film structure, First Stokes(S1), High Mobility, Hydrogen doping, Hydrogen incorporation, In-Ga-Zn-O(IGZO)