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학술지 Electronic Effect of Na on Cu(In,Ga)Se2 Solar Cells
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저자
조대형, 이규석, 정용덕, 김주희, 박수정, 김제하
발행일
201207
출처
Applied Physics Letters, v.101 no.2, pp.1-4
ISSN
0003-6951
출판사
American Institute of Physics (AIP),
DOI
https://dx.doi.org/10.1063/1.4733679
협약과제
11MB5700, 황화방법을 이용한 버퍼층 건식제조기술 개발 (총괄:대면적(900×1600㎟) 고효율(16%) CIGS 박막태양전지, 정용덕
초록
We report the effect of Na on the electronic properties of Cu(In,Ga)Se 2 (CIGS) thin-film solar cells with a structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/SiO x/soda-lime glass (SLG). The diffusion of Na from the SLG into the CIGS layer was systematically controlled by varying the thickness of SiO x. As the Na content increased, the hole concentration of CIGS was enhanced, while the band-gap was nearly constant, which led to a lower Fermi level in the CIGS towards its valence-band edge. The Na-induced increment in the built-in potential (V bi) across the n-(ITO/i-ZnO/CdS)/p-CIGS junction yielded an increment of open-circuit voltage that well agreed with the calculated V bi. © 2012 American Institute of Physics.
KSP 제안 키워드
Band gap, Built-in potential, CIGS layer, Electronic effect, Electronic properties, Fermi level, Hole concentration, Open circuit voltage(VOC), SiO x, Soda lime glass(SLG), Thin film solar cells