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학술지 Organic-Inorganic Hybrid Gate Dielectric for Solution-Processed ZnO Thin Film Transistors
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저자
오지영, 임상철, 김주연, 김철암, 조경익, 안성덕, 구재본, 윤성민
발행일
201309
출처
Journal of Vacuum Science and Technology B, v.31 no.5, pp.1-6
ISSN
1071-1023
출판사
American Vacuum Society (AVS)
DOI
https://dx.doi.org/10.1116/1.4817499
협약과제
13VB1900, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
초록
The preparation of a hybrid dielectric film was carried out by blending sol-gel-derived sodium beta alumina (SBA) and poly(4-vinylphenol) (PVP) to enhance the capacitance of a gate dielectric film. PVP-SBA was cured at a temperature sufficiently low enough to apply to a plastic substrate, while maintaining good electrical properties and uniformity. Addition of sol-gel-derived SBA improved the film density, resulting in good PVP-SBA thermal stability. The prepared PVP-SBA was used for high-performance aqueous solution-based ZnO transistors at 200 °C. © 2013 American Vacuum Society.
KSP 제안 키워드
4-vinyl phenol(Poly), Aqueous solution, Film density, Gate dielectric film, High performance, Hybrid dielectric, Organic-inorganic hybrid, Plastic substrate, Sodium beta alumina, Sol-gel-derived, Solution-processed