ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Fabrication of Multi-Electrode Array Platforms for Neuronal Interfacing with Bi-Layer Lift-off Resist Sputter Deposition
Cited 16 time in scopus Download 11 time Share share facebook twitter linkedin kakaostory
저자
김용희, 김국화, 백남섭, 한영환, 김아영, 정명애, 정상돈
발행일
201309
출처
Journal of Micromechanics and Microengineering, v.23 no.9, pp.1-7
ISSN
0960-1317
출판사
Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1088/0960-1317/23/9/097001
협약과제
12SC1400, 인공망막 이식용 생체적합성 나노-바이오 플렉시블 전극 기술 개발(총괄과제명 : 시각장애인의 시각 기능 회복을 위한 인공시각 인터페이스 기술), 정상돈
초록
We report a bi-layer lift-off resist (LOR) technique in combination with sputter deposition of silicon dioxide (SiO2) as a new passivation method in the fabrication of a multi-electrode array (MEA). Using the photo-insensitive LOR as a sacrificial bottom layer and the negative photoresist as a patterning top layer, and performing low-temperature sputter deposition of SiO2 followed by lift-off, we could successfully fabricate damage-free indium-tin oxide (ITO) and Au MEA. The bi-layer LOR sputter deposition processed Au MEA showed an impedance value of 6 × 105 廓 (at 1 kHz), with good consistency over 60 electrodes. The passivation performance of the bi-layer LOR sputter-deposited SiO2 was tested by electrodepositing Au nanoparticles (NPs) on the Au electrode, resulting in the well-confined and uniformly coated Au NPs. The bi-layer LOR sputter deposition processed ITO, Au, and Au NP-modified MEAs were evaluated and found to have a neuronal spike recording capability at a single unit level, confirming the validity of the bi-layer LOR sputter deposition as an effective passivation technique in fabrication of a MEA. These results suggest that the damage-free Au MEA fabricated with bi-layer LOR sputter deposition would be a viable platform for screening surface modification techniques that are available in neuronal interfacing. © 2013 IOP Publishing Ltd.
KSP 제안 키워드
Au electrode, Au nanoparticles(Au-NPs), Lift-off resist, Low temperature(LT), Multi-electrode array, Negative photoresist, Neuronal spike, Silicon dioxide, Sputter-deposited, Surface modification techniques, Top layer