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학술지 Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits
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저자
백강준, 정순원, 김동윤, 김주환, 김동유, 구재본, Jordan R. Quinn, Antonio Facchetti, 유인규, 노용영
발행일
201305
출처
Organic Electronics, v.14 no.5, pp.1407-1418
ISSN
1566-1199
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.orgel.2012.12.022
협약과제
12VB1300, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
초록
We report the development of high-performance inkjet-printed organic field-effect transistors (OFETs) and complementary circuits using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) for high-speed and low-voltage operation. Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type P(NDI2OD-T2) OFETs showed high field-effect mobilities of 0.1-0.4 cm 2 V-1 s-1 and low threshold voltages down to 5 V. These OFET properties were modified by changing the blend ratio of P(VDF-TrFE) and PMMA. The optimum blend-a 7:3 wt% mixture of P(VDF-TrFE) and PMMA-was successfully used to realize high-performance complementary inverters and ring oscillators (ROs). The complementary ROs operated at a supplied bias (VDD) of 5 V and showed an oscillation frequency (fosc) as high as ~80 kHz at VDD = 30 V. Furthermore, the fosc of the complementary ROs was significantly affected by a variety of fundamental parameters such as the electron and hole mobilities, channel width and length, capacitance of the gate dielectrics, VDD, and the overlap capacitance in the circuit configuration.© 2013 Elsevier B.V. All rights reserved.
키워드
Complementary circuit, Conjugated polymer, Dielectric blends, Organic field-effect transistor, Printed electronics
KSP 제안 키워드
Blend ratio, Channel Width, Circuit configuration, Complementary inverter, Conjugated polymer(PFO-co-MEH-PPV), Electronic circuit, Field-effect transistors(FETs), First Stokes(S1), Fundamental parameters, High Speed, High performance