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학술지 Stability Characteristics of Gallium-Doped Zinc-Tin-Oxide Thin-Film Transistors Fabricated Using a Sol-Gel Method
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저자
이종훈, 김창회, 김홍승, 박재훈, 류진화, 백규하, 도이미
발행일
201304
출처
한국물리학회, v.62 no.8, pp.1176-1182
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.62.1176
협약과제
12VC3300, 고 신뢰성 해양 센서 노드 및 센싱 요소 기술 개발, 백규하
초록
We investigated the incorporation of Ga into zinc-tin-oxide (ZTO) thin-film transistors (TFTs) and assessed the TFTs' electrical and stability properties. The Ga-doped ZTO (ZTO:Ga) thin films were deposited on thermally oxidized silicon substrates by using a sol-gel technique. The Ga contents were varied from 1 to 20 atomic percent (at.%) while the Zn:Sn ratio was maintained at 1:1. The dependence of the ZTO:Ga thin films' structural properties on the Ga content was analyzed using Xray diffraction (XRD) spectra, scanning probe microscopy (SPM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectrophotometry. The field effect mobilities and the I on/I off ratios of the ZTO:Ga-TFTs were between 0.68 and 2.95 cm2Vs-1s-1 and ~104 and ~106, respectively. At low Ga contents, the (<10-at.%) TFTs displayed similar TFT parameters, but the 20-at.%-Ga TFT showed improved mobility and stability characteristics. Moreover, the 20-at.%-Ga thin film had a smoother surface and increased crystallinity than the low Ga-content samples did. © 2013 The Korean Physical Society.
키워드
Ga, Sol-gel, TFTs, ZnSnO
KSP 제안 키워드
First Stokes(S1), Ga content, Ga-doped, I off, Oxidized silicon, S/N ratio, Scanning Probe Microscopy, Silicon substrate, Sol-gel technique, Stability characteristics, Stability properties