BROWSE
Detail
Journal Article
Seebeck Coefficient Characterization of Highly Doped n- and p-Type Silicon Nanowires for Thermoelectric Device Applications Fabricated with Top-Down Approach
Cited 12 time in 
Share 
Share
- Authors
- Kim Jaehyeon, Hyun Younghoon, Park Youngsam, Choi Wonchul, Kim Soojung, Jeon Hyojin, Zyung Taehyeong, Jang Moongyu
- Issue Date
- 2013-09
- Citation
- Journal of Nanoscience and Nanotechnology, v.13, no.9, pp.6416-6419
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- A silicon nanowire one-dimensional thermoelectric device is presented as a solution to enhance thermoelectric performance. A top-down process is adopted for the definition of 50 nm silicon nanowires (SiNWs) and the fabrication of the nano-structured thermoelectric devices on silicon on insulator (SOI) wafer. To measure the Seebeck coefficients of 50 nm width n- and p-type SiNWs, a thermoelectric test structure, containing SiNWs, micro-heaters and temperature sensors is fabricated. Doping concentration is 1.0× 1020 cm-3 for both for n- and p-type SiNWs. To determine the temperature gradient, a temperature coefficient of resistance (TCR) analysis is done and the extracted TCR value is 1750-1800 PPM 쨌 K-1. The measured Seebeck coefficients are -127.583 μV 쨌 K-1 and 141.758 μV 쨌 K-1 for n- and p-type SiNWs, respectively, at room temperature. Consequently, power factor values are 1.46 mW 쨌 m -1 쨌 K-2 and 1.66 mW 쨌 m-1 쨌 K-2 for n- and p-type SiNWs, respectively. Our results indicate that SiNWs based thermoelectric devices have a great potential for applications in future energy conversion systems. © 2013 American Scientific Publishers.
- KSP Keywords
- Doping concentration, Energy conversion systems, Future energy, Highly doped, K-2, Micro-heater, Nano-structured, Power factor(P.F), Room temperature, Seebeck coefficient, Silicon On Insulator(SOI)