ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors
Cited 21 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
저자
윤성민, 양신혁, 변춘원, 박상희, 정순원, 조두희, 강승열, 황치선, Hiroshi Ishiwara
발행일
201004
출처
Japanese Journal of Applied Physics, v.49 no.4 PART 2, pp.1-6
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/JJAP.49.04DJ06
협약과제
09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
초록
The combination of a ferroelectric polymer and an oxide semiconductor is a very promising solution to realize embeddable nonvolatile memory thin-film transistors (TFTs) for novel electronic devices. Memory TFTs with a gate structure of Al/80 nm-poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/4nm Al2O3/5nm ZnO were fabricated and their programming characteristics were investigated. Good performances in memory and transistor behaviors were successfully confirmed. When the voltage pulses of 짹15 V and 990 ms were employed, a memory on/off ratio of 4400 was obtained. It was found that the initial memory on/off ratio was closely related to the applied programming conditions such as pulse amplitude and width of programming voltage signals. Retention behaviors were also sensitively affected by the programming conditions. The initial memory on/off ratio of approximately 300 decreased to 3.4 after a lapse of 104 s when the programming voltage, pulse duration, and gate bias during the retention period were set to be 짹18 V, 500 ms, and open, respectively. © 2010 The Japan Society of Applied Physics.
KSP 제안 키워드
AND gate, Applied physics, Non-Volatile Memory(NVM), Oxide semiconductor, Programming characteristics, Pulse duration, Thin-Film Transistor(TFT), VDF-TrFE, Voltage pulse, electronic devices, ferroelectric polymer