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학술지 P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain
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저자
최성진, 한진호, 문동일, 김성호, 장문규, 최양규
발행일
201008
출처
IEEE Transactions on Electron Devices, v.57 no.8, pp.1737-1742
ISSN
0018-9383
출판사
IEEE
DOI
https://dx.doi.org/10.1109/TED.2010.2051331
협약과제
10MB1600, 자가충전 전원모듈 기반 EPMIC 기술개발, 김종대
초록
A p-channel dopant-segregated-Schottky-barrier (DSSB) device based on a SOI FinFET structure is proposed for silicon-oxide-nitride-oxide-silicon type Flash memory, providing the feasibility of bit-by-bit operation through the aid of a symmetric program/erase operation. This concept is based on utilizing injected holes due to enhanced Fowler-Nordheim tunneling probability triggered by the sharpened energy band bending at the DSSB source/drain junctions as a programming method and the tunneled electrons from a silicon channel as an erasing method. As a result, a threshold voltage window of nearly 4 V and good data retention are achieved within a P/E time of 3.2 μs. © 2006 IEEE.
키워드
Bit-by-bit, dopant-segregation (DS), FINFET, flash memory, multilevel cell (MLC), NAND flash, nickel, nickel silicidation, Nisi, nonvolatile memory, p-channel, Schottky-barrier, Schottky-barrier MOSFET, silicon-oxidenitride-oxide-silicon (SONOS), V control t
KSP 제안 키워드
Dopant segregation, Energy band, Fowler-Nordheim tunneling, Good Data, Multi-level Cell, NAND Flash, Non-Volatile Memory(NVM), Oxide-nitride-oxide, P-Channel, Programming method, SOI FinFET