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학술지 In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films
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저자
최철종, Seung-Min Kang, 홍효봉, 이수형, Jin-Gyu Kim, Kwang-Soon Ahn, Jong-Won Yoon
발행일
201004
출처
Materials Transactions, v.51 no.4, pp.793-798
ISSN
1345-9678
출판사
Japan Institute of Metals
DOI
https://dx.doi.org/10.2320/matertrans.M2009371
협약과제
10SF1300, 생체진단 가능 시각/미각 수용체 기반 센싱 기술 개발, 송기봉
초록
We fabricated metal-oxide-semiconductor (MOS) devices with a high-k Er-silicate gate dielectric, and demonstrated their electrical performance. The increase in the rapid thermal annealing (RTA) temperature leads to a reduction of the equivalent oxide thickness (EOT), which is attributed in par to the thickness evolution of Er-silicate film and to the chemical bonding change from an Si-rich to an Er-rich silicate. The insitu investigation of the interfacial reaction between the Er and SiO2 film using a high-voltage electron microscopy (HVEM) revealed a linear relationship between the squared thickness of Er-silicate layer and in-situ annealing time, indicating that the Er-silicate growth is a diffusion-controlled process. The parabolic growth constants of the Er-silicate film were calculated to be 2.3 × 10-16 and 9.3 × 10-16 cm2/s for in-situ annealing temperatures of 350 and 450°C, respectively. ©2010 The Japan Institute of Metals.
키워드
Er-silicate, Gate dielectrics, High-k, High-voltage electron microscopy (HVEM), Interfacial reaction, Metal-oxide-semiconductor (MOS)
KSP 제안 키워드
Annealing temperature, Annealing time, Chemical bonding, Diffusion-controlled process, Growth constants, High-K, High-voltage electron microscopy, In-situ annealing, In-situ transmission electron microscopy, Interfacial reaction, Metal-oxide(MOX)