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학술지 Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device
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저자
S. V. Jagadeesh Chandra, 정미라, 심규환, 홍효봉, 이수형, 안광순, 최철종
발행일
201004
출처
Journal of the Electrochemical Society, v.157 no.5, pp.H546-H550
ISSN
0013-4651
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/1.3332849
협약과제
10MS3900, 고신뢰 자율제어 SW를 위한 CPS(Cyber Physical Systems)핵심기술 개발, 박승민
초록
We fabricated Ge and Si metal oxide semiconductor devices with Pt/ HfO 2 gate stacks and investigated their structural and electrical properties. Postmetallization annealing in O2 ambient reduced the accumulation capacitance more significantly in Si devices than in Ge devices due to the increase in the thickness of a low- k interfacial layer in between the HfO2 film and Si substrate. Ge devices exhibited lower effective work function values for a Pt gate electrode than Si devices owing to the presence of a large number of positively charged dipoles caused by a strong Fermi-level pinning at the Ge surface. © 2010 The Electrochemical Society.
KSP 제안 키워드
Fermi-level pinning, Ge surface, Hfo 2, Metal-oxide(MOX), Positively charged, Si devices, Si substrate, Structural and electrical properties, effective work function, electrical properties(I-V curve), gate electrode