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학술지 Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer
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저자
정순원, 이종근, 김영순, 윤성민, 유인규, 유병곤, 노용영
발행일
201001
출처
Current Applied Physics, v.10 no.1 SUPPL., pp.e58-e61
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2009.12.014
협약과제
09IC1900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
Low-voltage top-gated ferroelectric polymer memory thin-film-transistors (TFTs) have been fabricated using a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and an amorphous conjugated polymer poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. TFTs having amorphous semiconducting polymers such as F8T2 exhibit near perfect yield due to their smooth surface morphology. The transfer curves of the fabricated TFTs exhibited counter-clockwise hysteretic behaviors, which is a result of the ferroelectric nature of P(VDF-TrFE). Memory transistors using Ni/P(VDF-TrFE)/F8T2 exhibit promising behaviors such as a memory window of 2.5 V at VG of 5 to -10 V, four orders-of-magnitude of ON/OFF ratio, and gate leakage current of 10-10 A. © 2009 Elsevier B.V. All rights reserved.
키워드
F8T2, Memory thin film transistor, Nonvolatile memory, P(VDF-TrFE)
KSP 제안 키워드
AND gate, Conjugated polymer(PFO-co-MEH-PPV), Hysteretic behavior, Non-Volatile Memory(NVM), Polymer memory, Smooth surface, Thin-Film Transistor(TFT), ferroelectric nature, ferroelectric polymer, gate dielectric, gate leakage current