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학술지 Active Terahertz Nanoantennas Based on VO2 Phase Transition
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저자
서민아, 경지수, 박형열, 고숙무, 김현선, Hannes Bernien, 김봉준, 최종호, 안영환, 김현탁, 박남규, 박규한, 안광준, 김대식
발행일
201006
출처
Nano Letters, v.10 no.6, pp.2064-2068
ISSN
1530-6984
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/nl1002153
협약과제
10MB2700, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
Unusual performances of metamaterials such as negative index of refraction, memory effect, and cloaking originate from the resonance features of the metallic composite atom1-6. Indeed, control of metamaterial properties by changing dielectric environments of thin films below the metallic resonators has been demonstrated7-11. However, the dynamic control ranges are still limited to less than a factor of 10,7-11 with the applicable bandwidth defined by the sharp resonance features. Here, we present ultra-broad-band metamaterial thin film with colossal dynamic control range, fulfilling present day research demands. Hybridized with thin VO2 (vanadium dioxide)12-18 films, nanoresonator supercell arrays designed for one decade of spectral width in terahertz frequency region show an unprecedented extinction ratio of over 10000 when the underlying thin film experiences a phase transition. Our nanoresonator approach realizes the full potential of the thin film technology for long wavelength applications. © 2010 American Chemical Society.
키워드
Nanoantenna, Phase transition device, Terahertz active device, Terahertz spectroscopy, Terahertz VO 2
KSP 제안 키워드
Active devices, Control range, Dynamic control, Memory effect, Metallic composite, Negative index of refraction, Phase transition, Sharp resonance, Terahertz frequency, Ultra-broadband, VO 2