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학술지 High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability
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저자
양신혁, 조두희, 유민기, 박상희, 황치선, 장진, 정재경
발행일
201002
출처
IEEE Electron Device Letters, v.31 no.2, pp.144-146
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2009.2036944
협약과제
09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We fabricated high-performance thin-film transistors (TFTs) with an amorphous-AlSnZnInO (a-AT-ZIO) channel deposited by cosputtering using a dual AlZnO and InSnO target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 $ cm2/V s an excellent subthreshold gate swing of 0.07 V/decade, and a high Ion/offratio of 109 even below the process temperature of 250 °C. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived Al2O3 thin film. © 2006 IEEE.
키워드
Amorphous semiconductor, Multicomponent oxide semiconductor, Passivation, Sputtering, Stability, Thin-film transistors (TFTs)
KSP 제안 키워드
Al-Sn, Atomic Layer Deposition, Bottom contact, Bottom gate, Contact configuration, Device stability, High performance, Multicomponent oxide, Oxide semiconductor, Process temperature, Sn-Zn