ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain
Cited 13 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
최성진, 한진우, 김성호, 문동일, 장문규, 최양규
발행일
201003
출처
IEEE Electron Device Letters, v.31 no.3, pp.228-230
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2009.2038348
협약과제
10ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 현창희
초록
A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions. © 2006 IEEE.
키워드
Dopant segregation (DS), Dopant-segregated Schottky barrier (DSSB), High performance, MOSFET, Ni silicide, Schottky barrier (SB), Thin body, Thin-film transistors (TFTs)
KSP 제안 키워드
Active Layer, Dopant segregation, High performance, Ni silicide, P-Channel, Petri net(PN), Poly-Si TFT, Polycrystalline silicon(poly-Si), Schottky barriers(SBs), Thin Body, Thin-Film Transistor(TFT)