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학술지 VO2 Thin-Film Varistor Based on Metal-Insulator Transition
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저자
김봉준, 이용욱, 최성열, 윤선진, 김현탁
발행일
201001
출처
IEEE Electron Device Letters, v.31 no.1, pp.14-16
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2009.2034763
협약과제
10MB2700, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
For electronic applications, we have fabricated VO2 thin-film variable resistors (varistors) using metal-insulator transition regarded as the abrupt current jump. The increase of the number of parallel stripe patterns in the varistor leads to the increase in current below a current-jump voltage, which endures a high surge voltage with high current and short rising time. Electrostatic discharge (ESD) experiments show that the varistic coefficient of 500 is larger than 3080, which is known for commercial ZnO varistors. In overvoltage-protection tests applying high ESD voltages up to 3.3 kV to a varistor, the maximum response voltage is lower than 200 V at an ESD voltage of 1600 V, and the electronic response time is less than 20 ns. This is sufficient to protect a device perfectly. © 2006 IEEE.
키워드
Electrostatic discharge (ESD), Metal-insulator transition (MIT), Surge protection, Variable resistor (varistor)
KSP 제안 키워드
Commercial ZnO, Electro-Static Discharge(ESD), High current, Rising time, Stripe patterns, Surge Voltage, Variable Resistor, ZnO varistors, metal-insulator transition, response time, surge protection