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학술지 Mechanically Flexible Thin Film Transistors and Logic Gates on Plastic Substrates by Use of Single-Crystal Silicon Wires from Bulk Wafers
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저자
이승기, 장호욱, Musarrat Hasan, 구재본, 안종현
발행일
201004
출처
Applied Physics Letters, v.96 no.17, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3409475
초록
This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm2 /V s, subthreshold voltage of 100 mV/dec and on/off ratios > 107. The inverter shows good performance and voltage gains of ~2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems. © 2010 American Institute of Physics.
KSP 제안 키워드
3 V, AND logic gate, Electrical measurements, Electronic systems, Flexible electronics, High performance, Plastic substrate, Single-crystal silicon, Supply voltage, Thin-Film Transistor(TFT), dry transfer