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학술지 Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
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저자
장문규, 전명심, 정태형
발행일
201008
출처
Journal of Vacuum Science and Technology B, v.28 no.4, pp.799-801
ISSN
2166-2746
출판사
AVS Science and Technology Society
DOI
https://dx.doi.org/10.1116/1.3457936
협약과제
10MB1600, 자가충전 전원모듈 기반 EPMIC 기술개발, 김종대
초록
A 20 μm long channel platinum-silicided p -type Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) is manufactured. The manufactured p -type SB-MOSFET shows 60 mV/decade subthreshold swing characteristic with leakage current less than 10-7 μA/μm and on/off current ratio larger than 106. Using this platinum-silicided p -type SB-MOSFET, the effective mobility of hole is extracted for the first time. The extracted effective hole mobility has slightly lower value compared to universal hole mobility. The reason for this is due to the existence of Schottky barrier between platinum-silicided and silicon. © 2010 American Vacuum Society.
KSP 제안 키워드
Barrier Metal, Effective hole mobility, Field-effect transistors(FETs), Leakage current, Long channel, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Mobility characteristics, ON/OFF current ratio, SB-MOSFET, Schottky barriers(SBs)