ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Microfabrication of SiN Membrane Nanosieve Using Anisotropic Reactive Ion Etching (ARIE) with an Ar/CF4 Gas Flow
Cited 8 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
저자
이대식, 송현우, 정광효, 정문연, 윤현철
발행일
201105
출처
Journal of Nanoscience and Nanotechnology, v.11 no.5, pp.4511-4516
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2011.3631
초록
We have designed, fabricated, and characterized a low-stressed silicon nitride (SiN) membrane nanosieve (100μm×100μm) using an anisotropic reactive ion etching (ARIE) combining with gas mixture, thus maintaining compatibility with the complementary metal-oxide semiconductor integrated circuit (CMOS IC) processes. The holes pattern of this nanosieve membrane was precisely controlled under 30 nm diameter by the electron beam writing. By employing mainly anisotropic reactive ion etching plus diffusion to the depth direction, the etch holes size was controlled to be the same with patterns on the e-beam resist (ER). This nanosieve membrane has proper mechanical strength withstanding up to one bar of transmembrane pressure. And it can endure harsh treatments such as high temperature up to 800°C. In addition, it is inert to a number of strong chemicals including the piranha (H 2SO 4 + H 2O 2) solution, highly-concentrated potassium hydroxide (KOH), hydrogen fluoride (HF), hydrogen chloride (HCl), and nitric acid (HNO 3). Copyright © 2011 American Scientific Publishers. All rights reserved.
키워드
Anisotropic etch, Nanomachining, Nanosieve, SiN membrane
KSP 제안 키워드
Anisotropic etch, CMOS IC, Complementary metal-oxide-semiconductor(CMOS), E-Beam, Electron Beam, Gas flow, Gas mixture, HNO 3, High Temperature, Hydrogen fluoride(HF), Integrated circuit