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학술지 Flexible Resistive Switching Memory Device Based on Graphene Oxide
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저자
홍설기, 김지은, 김상욱, 최성율, 조병진
발행일
201009
출처
IEEE Electron Device Letters, v.31 no.9, pp.1005-1007
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2010.2053695
협약과제
10ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 현창희
초록
A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 103, low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics. © 2010 IEEE.
키워드
Flexible memory, graphene oxide, resistive switching memory
KSP 제안 키워드
Flexible electronics, Flexible substrate, Graphene oxide(GOS), Resistive Random Access Memory(RRAM), Resistive switching characteristic, Switching performance, data retention, electrode materials, flexible memory, memory device, resistance ratio