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학술지 Voltage-Pulse-Induced Switching Dynamics in VO2 Thin-Film Devices on Silicon
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저자
서기완, 김봉준, 고창현, Yanjie Cui, 이용욱, 신준환, Shriram Ramanathan, 김현탁
발행일
201111
출처
IEEE Electron Device Letters, v.32 no.11, pp.1582-1584
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2011.2163922
초록
We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal-insulator transition (MIT jump) with VO2 thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers. © 2006 IEEE.
키워드
Metal-insulator transition (MIT), MIT switching characteristics, Oxide electronics, Vanadium dioxide, VO 2
KSP 제안 키워드
Delay Time, Endurance test, External resistance, Metallic state, Phase transition, Rising time, Transition layers, VO 2, Voltage pulse, insulating state, metal-insulator transition