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학술지 High-Responsivity and High-Speed Waveguide Photodiode With a Thin Absorption Region
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저자
박정우
발행일
201007
출처
IEEE Photonics Technology Letters, v.22 no.13, pp.975-977
ISSN
1041-1135
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LPT.2010.2048561
협약과제
10MB1300, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
초록
The characteristics of a waveguide photodiode with a thin absorption layer are reported. A responsivity of 1.08 A/W at 1.55μm was measured using a 0.1-μm-thick absorption region with a polarization dependence of less than 0.25 dB. A thin absorption layer enables us to use a thicker intrinsic layer. Using a thicker intrinsic region of 0.9 μm and an adiabatically reduced waveguide width, a bandwidth of 42 GHz was achieved. Adopting a tapering waveguide width did not give rise to a degradation of responsivity or alignment tolerance. © 2006 IEEE.
키워드
Photodetector, Photodiodes, Waveguide photodiodes
KSP 제안 키워드
Absorption layer, High Speed, Polarization dependence, Waveguide photodiodes(WGPD), alignment tolerance, high responsivity, intrinsic layer